Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
546987 | Microelectronics Reliability | 2012 | 7 Pages |
Abstract
In this paper, we propose a read SNM model which considers soft oxide breakdown (SBD). It makes use of a resistance for modeling the soft oxide breakdown which adds two terms to the original model expression for the read SNM. The accuracy of the model is verified by comparing its predictions with those of HSPICE simulations for 45, 32, and 22 nm technologies. The comparison reveals a very good accuracy for the model. The results also show that NBTI aggravates the effect of SBD on the read SNM. This suggests that the effect of NBTI and SBD should be studied concurrently as has been performed in our model.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi,