| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547026 | Microelectronics Reliability | 2012 | 4 Pages |
Abstract
A novel gate-suppression technique derived from source-pumping technique is proposed for Electrostatic Discharge (ESD) protection application. By employing the complementary SCR structure, an improved source-pumping and the gate-suppression scheme are able to extend ESD window and endure a high level of ESD impact without additional layout area cost. The fast rise time TLP test revealed the gate-suppression technique provide more effective protection than the source-pumping technique.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Meng Miao, Shurong Dong, Mingliang Li, Jian Wu, Fei Ma, Jianfeng Zheng, Yan Han,