| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547040 | Microelectronics Reliability | 2012 | 5 Pages |
Abstract
In this work, a Metal–Insulator–Semiconductor (MIS) based Schottky-diode hydrogen sensor was fabricated with La2O3 as a gate insulator. The electrical properties (current–voltage characteristics, change in barrier height and sensitivity) and hydrogen sensing performance (dynamic response and response time) were examined from 25 °C to 300 °C and towards H2 with different concentrations. The conduction mechanisms were explained in terms of Fowler–Nordheim tunneling (below 120 °C) and the Poole–Frenkel effect at temperatures (above 120 °C). The results show that at an operating temperature of 260 °C, the sensitivity of the device can reach a maximum value of 4.6 with respect to 10,000-ppm hydrogen gas and its response time was 20 s.
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Authors
Gang Chen, Jerry Yu, P.T. Lai,