| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547066 | Microelectronics Reliability | 2012 | 5 Pages |
The electronic properties of metal–organic semiconductor-inorganic semiconductor diode between InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS) polymeric organic semiconductor film have been investigated via current–voltage and capacitance–voltage methods. The Al/PEDOT:PSS/p-InP contact exhibits a rectification behavior with the barrier height value of 0.98 eV and with the ideality factor value of 2.6 obtained from their forward bias current voltage (I–V) characteristics at the room temperature greater than the conventional Al/p-InP (0.83 eV, n = 1.13). This increase in barrier height and ideality factor can be attributed to PEDOT:PSS film formed at Al/p-InP interface.
► PEDOT based heterojunction diode was fabricated. ► The interface state density has been calculated. ► The structure shoved rectification behavior. ► The PEDOT film changed the electrical parameters.
