Article ID Journal Published Year Pages File Type
547073 Microelectronics Reliability 2012 5 Pages PDF
Abstract

A semi-analytical model for impact ionization coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy Et and the distance travelled by electron gaining Et. In addition, ionization threshold energy is semi-analytically modelled for GNR. During modelling, we justify our assumptions using analytical modelling and comparison with simulation. Furthermore, it is shown that conventional silicon models are not valid for calculation of ionization coefficient of GNR. Finally, the profile of ionization is presented using the proposed models and the results are compared with that of silicon.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
, , , , ,