Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547073 | Microelectronics Reliability | 2012 | 5 Pages |
Abstract
A semi-analytical model for impact ionization coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy Et and the distance travelled by electron gaining Et. In addition, ionization threshold energy is semi-analytically modelled for GNR. During modelling, we justify our assumptions using analytical modelling and comparison with simulation. Furthermore, it is shown that conventional silicon models are not valid for calculation of ionization coefficient of GNR. Finally, the profile of ionization is presented using the proposed models and the results are compared with that of silicon.
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Authors
Mahdiar Ghadiry, Asrulnizam Bin Abd Manaf, Mahdieh Nadi, Meisam Rahmani, M.T. Ahmadi,