| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547112 | Microelectronics Reliability | 2012 | 5 Pages |
In this study, we have successfully investigated the electrical performances of In0.4Al0.6As/In0.4Ga0.6As metamorphic high-electron-mobility transistor (MHEMT) at temperatures range from 275 K to 500 K comprehensively. By extracting the device S-parameters, the temperature dependent small signal model has been established. At room temperature, 0.15 μm T-gate device with double δ-doping design exhibits fT and fMAX values of 103 GHz and 204 GHz at Vds = 1 V, an extrinsic transconductance of 678 mS/mm, and a current density of 578 mA/mm associated with a high breakdown voltage of −13 V. Power measurements were evaluated at 40 GHz and the measured output power, linear power gain, and maximum power-added efficiency, were 7.12 dBm, 10.15 dB, and 23.1%, respectively. The activation energy (Ea) extracted from Arrhenius plots is = 0.34 eV at 150 ≦ T ≦ 350 K. The proposed device is promisingly suitable for millimeter-wave power application.
