| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547117 | Microelectronics Reliability | 2012 | 6 Pages |
Abstract
This paper reports the characteristics and reliability of nMOSFETs using the dicing before grinding (DBG) process for substrate transfer. The devices have good uniformity after the substrate transfer procedure. Under the mechanical strain, the longitudinal strain provides greater enhancement than transverse strain for nMOSFETs. The increment rate of saturation current (ID,sat) is decreased and saturated when the gate length is in the sub-micro region. However, the width effect is not clear. Good reliability is obtained after dynamic, static bending strain and hot carrier stress (HCS) under a curvature bending vehicle with a radius of 7.5 mm.
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Authors
Hsuan-ling Kao, Chih-Sheng Yeh, Meng-Ting Chen, Hsien-Chin Chiu, Li-Chun Chang,