| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547119 | Microelectronics Reliability | 2012 | 8 Pages |
Abstract
A linear correlation between 100 ns TLP and the second HMM peak current was found for several common types of protection devices. A detailed thermal analysis offers a straightforward explanation of the correlation factor in terms of pulse duration. It is found that the thermal effect of the first HMM peak can be ignored. The impact of non-thermal failure mechanisms, e.g. gate oxide breakdown due to an over-voltage, which may limit the validity of the correlation are explored for a complete system, which includes additional components. The results from this investigation are essential for proper application of the System-efficient ESD Design (SEED) methodology.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Guido Notermans, Sergey Bychikhin, Dionyz Pogany, David Johnsson, Dejan Maksimovic,