| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547179 | Microelectronics Reliability | 2012 | 9 Pages |
Abstract
The doping of Ta2O5 films with a proper element or its mixing with another high-k dielectric as a breakthrough to extend the potential of Ta2O5 toward meeting the criteria for future technological nodes is discussed. Essential issues in the engineering of storage capacitor parameters for dynamic memories based on Ti-doped Ta2O5, Hf-doped Ta2O5 and mixed HfO2–Ta2O5 layers are presented. The benefits and the disadvantages of these modified Ta2O5 stacks are discussed.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
E. Atanassova, A. Paskaleva, D. Spassov,