| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547230 | Microelectronics Reliability | 2012 | 4 Pages |
Abstract
Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded CuCu layer.
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Authors
C.S. Tan, D.F. Lim, X.F. Ang, J. Wei, K.C. Leong,