Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures

In this study, we investigated temperature dependent electrical and dielectric properties of the Sn/p-Si metal–semiconductor (MS) structures using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics in the temperature range 80–400 K. The dielectric constant (ε′), dielectric loss (ε′′), dielectric loss tangent (tan δ) and ac electrical conductivity (σac) were calculated from the C–V and G/ω–V measurements and plotted as a function of temperature. The values of the ε′, ε′′, tan δ and σac at low temperature (=80 K) were found to be 0.57, 0.37, 0.56 and 1.04 × 10−7, where as the values of the ε′, ε′′, tan δ and σac at high temperature (=400 K) were found to be 0.75, 0.44, 0.59 and 1.21 × 10−6, respectively. An increase in the values of the ε′, ε′′, tan δ and σac where observed with increase in temperature. Furthermore, the effects of interface state density (NSS) and series resistance (RS) on C–V characteristics were investigated in the wide temperature range.