| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547533 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
Mechanisms of breakdown in Ta2O5 are evaluated by studying the leakage and TDDB characteristics, and a model close to those widely accepted for SiO2 is suggested. Various statistical modeling approaches are evaluated and used to verify this breakdown model. Accelerated testing techniques are also outlined that can dramatically improve parameter estimates while slashing reliability test times.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Anand Inani, Victor Koldyaev, Spencer Graves,