Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547538 | Microelectronics Reliability | 2007 | 6 Pages |
Abstract
In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC–DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Y. Gao, N. Guitard, C. Salamero, M. Bafleur, L. Bary, L. Escotte, P. Gueulle, L. Lescouzeres,