| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547541 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
Time-dependent dielectric breakdown of copper/low-k interconnects has been found to degrade for narrow metal lines. Several feasible causes for degradation have been investigated, including enhanced electric fields, the optical proximity effect, and microloading in etch. Microloading is found to be the best explanation of the observed behavior. A mathematical model has been developed to relate the geometries of layout features to mean-time-to-failure (MTTF).
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Linda Milor, Changsoo Hong,