| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547542 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
The lifetime of porous low-k dielectrics has been observed to degrade as a function of porosity. This paper demonstrates that pores disturb the electric field within a dielectric through finite element simulation. The disturbance of electric field extends beyond the pore itself. A model of charge transport has been developed to demonstrate the sensitivity of leakage currents in a dielectric to porosity.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Changsoo Hong, Linda Milor,