Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547559 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
Thermal laser stimulation (TLS) is a widely used tool in a failure analysis laboratory to detect defects in integrated circuits. TLS can also be used for good device characterization. In this paper, we apply TLS – and especially optical beam induced resistance change (OBIRCH) method – to localization of electrically high stressed areas. We test this process with a new product from power AC switch family without failure. We localize several sensitive areas involved during and after switching, which are similar to the ones obtained by electrical simulations.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Debleds, J.P. Rebrasse, L. Dantas de Morais, I. Frapreau, R. Perdreau, B. Morillon,