Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547584 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
In this work, we present a novel 3D electro-thermal simulation tool capable of taking into account also particular driving strategies of the electron device, as it may be the case of smart power MOSFETs where a control logic interacts with the power section and controls its dissipated power and temperature. As an example, a thermal shutdown circuit, capable of reading the temperature on chip and switching the device off if the latter reaches dangerous values, usually embedded within smart power devices used in automotive applications to drive direction light or small motors/actuators, is simulated to validate our approach.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Andrea Irace, Giovanni Breglio, Paolo Spirito,