| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547587 | Microelectronics Reliability | 2007 | 6 Pages |
Abstract
This paper proposes an analysis of the stress level affecting non-punch-through IGBTs featuring different threshold-voltage values during their operation in inverter applications. Experimental results are interpreted and complemented by electro-thermal simulation, employing a partially self-developed transistor model. The outcome of this study is that the threshold-voltage value is a good performance and reliability indicator for transistors operated in parallel.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Castellazzi, M. Ciappa, W. Fichtner, M. Piton, M. Mermet-Guyennet,