| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547603 | Microelectronics Reliability | 2007 | 6 Pages |
Abstract
A systematic methodology is developed in order to clarify the punch through trench insulated gate bipolar transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify if the failure mechanism is due to a breakdown, a latchup or a thermal runaway phenomenon.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Benmansour, S. Azzopardi, J.C. Martin, E. Woirgard,