| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547616 | Microelectronics Journal | 2012 | 7 Pages |
Abstract
This paper presents a two-stage fully differential inductorless wideband low noise amplifier (LNA) with high dynamic range, using a switchable capacitive attenuation circuit, selectable-input impedance-matching topology, and bypassable amplifier. The proposed LNA is fabricated in a double-oxide 65nm/0.2μm minimum channel length CMOS technology and achieves a bandwidth from 500 MHz to 2.5 GHz, a voltage gain range of 30.6 dB, a minimum noise figure of 4.1 dB, and a maximum IIP3 of 22.8 dBm. The LNA dissipates between 28.8 and 39.5 mW and occupies an area of 0.041 mm2.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Xavier Trulls, Diego Mateo, Adria Bofill,