| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547636 | Microelectronics Reliability | 2007 | 5 Pages |
Abstract
The operating methods of flash memory device are worth studying due to the reliability issue. A novel programming method based on a new current mechanism is developed in this work to improve the performance and reliability of flash memory. Experimental results show that this novel programming method with higher gate current injection efficiency not only increases the operating speed but also improves the reliability. This reliability improvement can be attributed to the reduction of oxide-trap-charge generation and threshold-voltage shift.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Chia-Huai Ho, Kuei-Shu Chang-Liao, Ya-Nan Huang, Tien-Ko Wang, T.C. Lu,