Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547767 | Microelectronics Journal | 2010 | 7 Pages |
Abstract
A fault primitive-based analysis of all static simple (i.e., not linked) three-cell coupling faults in n×1 random-access memories (RAMs) is discussed. All realistic static coupling faults that have been shown to exist in real designs are considered: state coupling faults, transition coupling faults, write disturb coupling faults, read destructive coupling faults, deceptive read destructive coupling faults, and incorrect read coupling faults. A new March test with 66n operations able to detect all static simple three-cell coupling faults is proposed. To compare this test with other industrial March tests, simulation results are also presented in this paper.
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Hardware and Architecture
Authors
Petru Caşcaval, Doina Caşcaval,