| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547798 | Microelectronics Journal | 2009 | 5 Pages |
Highly linearized of HBT power amplifier (PA) was achieved for wireless digital mobile communication systems. This study investigates in detail the improvement of the linearity of HBT power amplifiers. The dependence of collector–base capacitance (Cbc) on bias is regarded initially as a trade-off between linearity and breakdown voltage. A simulation of device performed using SILVACO software reveals that at a capacitance ratio; Cbc (0/6 V) is 1.25 at a BVceo of 22 V. The device-level DC characteristic, load-pull power performance and power cell PAs are evaluated. A reasonably high PAE ~55% is attainable at 2.0 GHz and an adjacent channel leakage power ratio (ACPR) of over −48 dBc is achieved. The maximum achievable PAE is 54% with a maximum power density of 0.75 W/mm at 5.8 GHz. The novel HBT epitaxial structure, the layout of power cell design and the thick metal shunt process used to ensure the high linearity of the power cell are demonstrated.
