Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547858 | Microelectronics Journal | 2009 | 4 Pages |
Abstract
We synthesized polycrystalline ZnO films via oxidative annealing of ZnSe/yttria-stabilized zirconia (YSZ) heterostructures and investigated the influence of the processing conditions on their structural and optical properties. While ZnO films synthesized using low-temperature annealing (500–600 °C) did not show any preferential orientation, highly textured films were obtained at high temperatures (700–800 °C). In addition, we demonstrated that prolonged high-temperature annealing (3 h at 800 °C) effectively eliminated point defects, as was evident from the increased band edge to deep-level emission intensity ratio.
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Authors
O. Maksimov,