Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547926 | Microelectronics Journal | 2008 | 8 Pages |
Abstract
An analytical two-dimensional capacitance–voltage model for AlGaN/GaN high electron mobility transistor (HEMTs) is developed, which is valid from a linear to saturation region. The gate source and gate drain capacitances are calculated for 120 nm gate length including the effects of fringing field capacitances. We obtain a cut-off frequency (fT) of 120 GHz and maximum frequency of oscillations (fmax) of 160 GHz. The model is very useful for microwave circuit design and analysis. Additionally, these devices allow a high operating voltage VDS, which is demonstrated in the present analysis. These results show an excellent agreement when compared with the experimental data.
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Hardware and Architecture
Authors
Rajesh K. Tyagi, Anil Ahlawat, Manoj Pandey, Sujata Pandey,