| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547951 | Microelectronics Journal | 2008 | 5 Pages |
Abstract
This paper presents the practical issues encountered in designing SRAM cell design on partially depleted SOI, including the effects of floating-body potential and parasitic bipolar. It also discusses the characteristics of single-event upsets (SEU) harden and total-dose radiation harden of SOI SRAM. A fully integrated solution, using a new type memory cell SRAM described.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
He Wei, Zhang Zheng-xuan, Zhang En-xia, Yu Wen-jie, Tian Hao, Wang Xi,