Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
547971 | Microelectronics Journal | 2008 | 7 Pages |
The basic building blocks for resonant tunneling diode (RTD) logic circuits are threshold gates (TGs) instead of the conventional Boolean gates (AND, OR, NAND, NOR) due to the fact that, when designing with RTDs, TGs can be implemented as efficiently as conventional ones, but realize more complex functions. Recently, RTD structures implementing multi-threshold threshold gates (MTTGs) have been proposed which further increase the functionality of the original TGs while maintaining their operating principle and allowing also the implementation of nanopipelining at the gate level. This paper describes the design of n-bit adders using these MTTGs. A comparison with a design based on TGs is carried out showing advantages in terms of power consumption and power delay product.