| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 547982 | Microelectronics Journal | 2008 | 5 Pages |
Abstract
The electronic properties of InAs quantum dots (QDs) grown on InAlAs/InP(0 0 1) were studied by using capacitance–voltage (C–V) analysis and photoluminescence (PL) measurements. The level positions of electrons and holes could be studied separately by using n- and p-type InAlAs matrices, respectively. The holes are found to be more confined than electrons in these kinds of dots.
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Authors
O. Saad, M. Baira, R. Ajjel, H. Maaref, B. Salem, G. Brémond, M. Gendry,