| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548009 | Microelectronics Journal | 2007 | 6 Pages |
Abstract
An enhancement-mode pseudomorphic high electron mobility transistor (E-mode pHEMT) with In0.49Ga0.51P/In0.25Ga0.75As/GaAs structure is studied in this paper. The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations. An optimized δ-doped InGaP/InGaAs pHEMT structure is found to be superior to the conventional AlGaAs/InGaAs pHEMT. It reveals that the maximum drain-source current (IDS) goes up to 1600 mA/mm and transconductance (Gm) is 2120 mS/mm.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jia-Chuan Lin, Yu-Chieh Chen, Wei-Chih Tsai,