Article ID Journal Published Year Pages File Type
548024 Microelectronics Journal 2007 10 Pages PDF
Abstract

Semi-insulating silicon carbide (SiC) is a fully processable semiconductors substrate that is commonly used as an alternative to conventional silicon (Si) in high-power applications. Here we examine the feasibility of using SiC as a substrate for the development of minimally invasive multi-sensor micro-probes in the context of organ monitoring during transplantation. In particular, we make a thorough comparison of Si and SiC material mechanical and electrical properties, and we extend this analysis to life-like situations using completed devices. Our results show that SiC outperforms Si in all respects, with a four times higher modulus of rupture for SiC devices and a 10-fold increase in the frequency range for electrical measurements in SiC-based probes. These results suggest that SiC should be preferably used over Si in all biomedical applications in which device breakage must be avoided or very precise electrical measurements are required.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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