| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548027 | Microelectronics Journal | 2007 | 4 Pages |
Abstract
A miniature SAW device is designed and fabricated at 1 GHz for wireless communication system. A 5 μm thin film of ZnO is successfully deposited using RF sputtering technique on plasma-enhanced chemical deposition (PECVD) SiO2 layer of 1 μm on top of Si wafer under various operating conditions. The c-axis-oriented ZnO film exhibit a sharp diffraction peak corresponding to the (0 0 2) reflection at 2θ=34.42. The fabrication process utilizing the micro-electro-mechanical systems (MEMS) technology of the SAW device is described. Simulation of the RF-SAW filter is performed. Measurements and experimental work are presented for the RF-SAW device.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Amal Zaki, Hamed Elsimary, Mona Zaghloul,