| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548037 | Microelectronics Journal | 2006 | 4 Pages |
Abstract
We have grown by Molecular Beam Epitaxy GaInNAs/GaAs (1 1 1)B quantum wells (QWs) embedded in p-i-n diode and laser diode structures. The impact of the different growth parameters (As flux, growth temperature, growth rate, ion density) on the optical and structural properties of this material is studied by Photoluminescence and Atomic Force Microscopy. Additionally, systematic studies of rapid thermal annealing cycles have been performed to optimize the laser structures. Finally, edge-emitting laser diodes have been processed using these structures. These devices showed room-temperature laser emission above 1.2 μm under pulsed current conditions.
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Authors
J. Miguel-Sánchez, A. Guzmán, J.M. Ulloa, M. Montes, A. Hierro, E. Muñoz,