Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
548049 | Microelectronics Journal | 2006 | 6 Pages |
Abstract
The growth of InAs quantum dots (QDs) on GaAs (0Â 0Â 1) substrates by selective area molecular beam epitaxy (SA-MBE) with dielectric mask is investigated. The GaAs polycrystals on the mask, which is formed during growth due to low GaAs selectivity between dielectric mask and epitaxial region in MBE, strongly affect the distribution of InAs QDs on the neighbouring epitaxial regions. It is found that the GaAs polycrystalline regions strongly absorb indium during QD growth, confirmed by microscopic and optical studies. GaAs polycrystalline deposit can be reduced under low growth rate and high-temperature growth conditions. Almost no reduction in QD areal density is observed when there is minimal polycrystalline coverage of the mask.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
J.C. Lin, P.W. Fry, R.A. Hogg, M. Hopkinson, I.M. Ross, A.G. Cullis, R.S. Kolodka, A.I. Tartakovskii, M.S. Skolnick,