| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548054 | Microelectronics Journal | 2006 | 4 Pages |
Abstract
By investigating the morphological evolution during epitaxial growth of Ge on Si(0 0 1) substrates, we find that highly uniform distributions of islands can be obtained. The islands are no longer domes but they consist of barns, which are bounded by steeper facets. A detailed morphological analysis indicates the presence of facets at their base, which are not stable for Ge but for Si. Finally, we show that long-range ordering of highly uniform SiGe barns can be obtained when the growth is performed on patterned Si(0 0 1) substrates.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Stoffel, A. Rastelli, T. Merdzhanova, G.S. Kar, O.G. Schmidt,