| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548074 | Microelectronics Journal | 2006 | 7 Pages |
Abstract
The paper presents the results of the application of physics-based mixed-mode simulations to the analysis and optimization of the reverse recovery for Si-based fast recovery diodes (FREDs) using Platinum (Pt) lifetime killing. The trap model parameters are extracted from Deep Level Transient Spectroscopy (DLTS) characterization. The model is validated against experimental characterization carried out on the current International Rectifier (IR) FRED PiN technology. Improved designs, using emitter control efficiency and merged PiN–Schottky structures, are analyzed. Comparison between simulated and measured results are presented.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F. Cappelluti, F. Bonani, M. Furno, G. Ghione, R. Carta, L. Bellemo, C. Bocchiola, L. Merlin,