| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548077 | Microelectronics Journal | 2006 | 4 Pages |
Abstract
The paper presents experimental results on samples of fast soft reverse recovery thyristors with axial carrier lifetime gradient in the wide base, realised using combination of iridium diffusion with low dose of electron irradiation. Using this technique, fast thyristors of ITAV=960 A, VDRM=3 kV, turn-off time tq≈110 μs and reverse recovery charge Qrr≈700 μC, were fabricated. The softness factor tf/ts≈1 at −dIT/dt=50 A/μs. Devices can be used in e.g. frequency converters based on the current source inverter.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Černík,