| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548208 | Microelectronics Reliability | 2013 | 5 Pages |
Abstract
This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilient to process, supply voltage, and temperature (PVT) variations. The adaptive body biasing scheme uses a current source for PVT sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. ADS simulation results show that the resilient body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process, supply voltage, and temperature variations.
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Authors
J.S. Yuan, E. Kritchanchai,