| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548212 | Microelectronics Reliability | 2013 | 7 Pages |
Abstract
The hot carrier reliability and self-heating of the Al0.3Ga0.7As/In0.25Ga0.75As pHEMT has been examined using mixed-mode simulation. A two-stage power amplifier using 0.15 μm InGaAs pHEMT technology with an on-chip linearizer has been designed and fabricated for the evaluation of electrical stress on RF circuit performances. The power amplifier was subjected to high RF input power while doubling the supply voltage for accelerated aging. The experimental data of the amplifier’s output power, power-added efficiency, and linearity show little changes after 10 h of continuous RF stress.
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Authors
J.-S. Yuan, Y. Wang, J. Steighner, H.-D. Yen, S.-L. Jang, G.-W. Huang, W.-K. Yeh,