| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548222 | Microelectronics Reliability | 2012 | 5 Pages |
Abstract
In this work we present a procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer characteristics after DC stress. It is based on the Universal Method and Extraction Procedure, UMEM, previously applied to other types of TFTs. The compact model and extraction procedure allows determining basic device parameters, which can be used to study the device behavior.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Cerdeira, M. Estrada, B.S. Soto-Cruz, B. Iñiguez,