| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548255 | Microelectronics Reliability | 2012 | 7 Pages |
The voids at the interface of anisotropic conductive film (ACF) to glass are typically formed during bonding process for Chip-On-Glass (COG) packages. The low temperature (∼23 °C) ArH2 plasma pretreatment on glasses are investigated to enhance the void-free bonding of ACF to glass for COG packages. The void fraction of glass with ACF is significantly reduced from 52% of untreated-glass to 0% of ArH2 plasma-pretreated glass. The improved void-free ACF bonding is found to be highly dependent on the surface characteristics of glass. The surface energies, surface morphologies and surface compositions of glasses are discussed how to affect the enhanced void-free bonding of ACF to glass by low temperature ArH2 plasmas. The surface energies, such as total surface energies, polar surface energies and dispersive surface energies of glasses are obtained by calculating the basis of the measured contact angles of three various surface tensions of liquids. The surface morphologies of glasses are observed by field emitted scanning electron microscopy (FESEM). The surface compositions, such as atomic compositions and chemical bond compositions of glasses are analyzed using X-ray photoelectron spectroscopy (XPS).
