Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
548269 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
We report about the time dependent gate dielectric breakdown failure of high voltage p-channel MOSFETs submitted to hot-carrier stress. We consider the time integral of the instantaneous gate current raised to a constant exponent as a measure of the dielectric film wear out, and we check that this integral computed up to the dielectric failure time is indeed a constant not depending on the drain–source stress bias.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F. Alagi,