| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548273 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
We present a new method for the on-wafer-characterisation for the reverse recovery behaviour of integrated diodes, which can perform on-wafer automated measurements over a wide range of different bias and pulsing conditions.The system is based on a Transmission-Line-Pulsing (TLP) technique and can be used to characterise diodes down to the regime of 10 ns, using pulses of several hundred volts and several Ampere peak current.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Martin Sauter, Werner Simbürger, David Johnsson, Matthias Stecher,