| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548297 | Microelectronics Reliability | 2010 | 6 Pages |
Abstract
DMOS FET parameter drift trend under common ageing conditions is analyzed by assuming first order kinetics and distributed activation energy. We propose an analysis technique for improving the accuracy of the microscopic parameter estimation combining the analytical solution of the kinetic equation with the multi-dimensional regression of experimental drift data. The case of a low voltage DMOS subjected to hot-carrier stress at low overdrive is worked out in details, as an example.
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Authors
F. Alagi,