| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548333 | Microelectronics Reliability | 2008 | 6 Pages |
Abstract
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
R. Pagano, S. Lombardo, F. Palumbo, P. Kirsch, S.A. Krishnan, C. Young, R. Choi, G. Bersuker, J.H. Stathis,