| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548343 | Microelectronics Reliability | 2008 | 6 Pages |
Abstract
In this paper, through triple SuperFlash® cell, different results of high temperature operation lifetime (HTOL) after endurance cycling have been identified. Several factors affected this type device lifetime, including of program-erase cycling stress and bake procedure, are investigated. Due to special erase operation mode, a different behavior of charge trapping/de-trapping in triple SuperFlash® cell has been observed and analyzed. The mechanism which induced various HTOL results could be explained by the combined effects of voltage acceleration and electrons trapping/de-trapping behaviors during bake.
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Authors
Zigui Cao, Bo Zhang, Xiong Zhang, Elton Lee, Weiran Kong,