| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548356 | Microelectronics Reliability | 2008 | 7 Pages |
Abstract
The authors observed that the on-current (Ion) and the logarithm of the off-current (log(Ioff)) of modern submicron MOS transistors tend to follow a very good linear relationship. This paper shall provide a tentative explanation on this experimentally observed linear relationship. Our experimental data show that Ion has a very good linear relationship with drain induced barrier lowering (DIBL). Similarly, log Ioff has a very good linear relationship with DIBL. Thus, the mathematical elimination of DIBL will imply a very good linear relationship between Ion and log Ioff. Finally, we will demonstrate the application of our theory to both n-channel and p-channel MOS transistors with and without tensile stress.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
W.S. Lau, Peizhen Yang, C.W. Eng, V. Ho, C.H. Loh, S.Y. Siah, D. Vigar, L. Chan,