| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548357 | Microelectronics Reliability | 2008 | 4 Pages |
Abstract
To characterize hot-carrier-injection degradation, a typical reaction–diffusion model has been used in low-voltage NMOSFETs with only hot-electron-injection. In this paper, an improved reaction–diffusion model of hole-injection and electron-injection induced interface-state generation, with a lower time exponent, is proposed in high-voltage NMOSFETs. The dynamics of hot-carrier-injection are considered with simulation, experiment and theory. Hole-injection induced by an additional high-electric-field outside the gate is found to be also responsible for degradation mechanism. Based on a better understanding of the mechanism of HV NMOSFETs, the modified reaction–diffusion model for hot-carrier-injection stress involves hole-injection.
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Authors
M.Z. Dai, S.I. Kim, Andrew Yap, Shaohua Liu, Arthur Cheng, Leeward Yi,