Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks

The density and energy distribution of electrically active interface defects in the (1 0 0)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (1 0 0)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 °C.