| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 548456 | Microelectronics Reliability | 2007 | 10 Pages |
Abstract
Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under static and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are regarded, exploited and optimised.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Domański, Mauro Ciappa, Wolfgang Fichtner,