Modeling current transport in ultra-scaled field-effect transistors

An overview of models used for the simulation of current transport in nanoelectronic devices within the framework of TCAD applications is presented. Modern enhancements of semiclassical transport models based on microscopic theories as well as quantum-mechanical methods used to describe coherent and dissipative quantum transport are specifically addressed. This comprises the incorporation of quantum corrections and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are capable of accounting for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer’s perspective and an outlook on future research directions is given.